GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.
%0 Journal Article
%1 oehme2012detectors
%A Oehme, M
%A Schmid, M
%A Kaschel, M
%A Gollhofer, M
%A Widmann, D
%A Kasper, E
%A Schulze, J
%B Applied Physics Letters
%D 2012
%I American Institute of Physics
%J Appl. Phys. Lett.
%K iht j.schulze.iht journal
%N 14
%P 141110--
%R 10.1063/1.4757124
%T GeSn p-i-n detectors integrated on Si with up to 4% Sn
%U https://doi.org/10.1063/1.4757124
%V 101
%X GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.
@article{oehme2012detectors,
abstract = {GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4%, fabricated for vertical light incidence, and characterized. The complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy. The Sn content shifts the responsivity into the infrared, about 310 nm for the 4% Sn sample. An increase of the optical responsivity for wavelengths higher than 1550 nm can be observed with increasing Sn content. At 1600 nm, the optical responsivity is increased by more than a factor of 10 for the GeSn diode with 4% Sn in comparison to the Ge reference diode.},
added-at = {2018-11-16T14:37:09.000+0100},
author = {Oehme, M and Schmid, M and Kaschel, M and Gollhofer, M and Widmann, D and Kasper, E and Schulze, J},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28de4265d24d08528f5848f3d608a4a6b/ihtpublikation},
booktitle = {Applied Physics Letters},
comment = {doi: 10.1063/1.4757124},
doi = {10.1063/1.4757124},
interhash = {cdaf69419bfc6f09d18aefae2d945e59},
intrahash = {8de4265d24d08528f5848f3d608a4a6b},
issn = {00036951},
journal = {Appl. Phys. Lett.},
keywords = {iht j.schulze.iht journal},
month = oct,
number = 14,
pages = {141110--},
publisher = {American Institute of Physics},
timestamp = {2018-11-16T13:37:09.000+0100},
title = {GeSn p-i-n detectors integrated on Si with up to 4% Sn},
url = {https://doi.org/10.1063/1.4757124},
volume = 101,
year = 2012
}