The ternary alloy semiconductor SixGe1-x-ySny presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. SixGe1-x-ySny offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- SixGe1-x-ySny hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the SixGe1-x-ySny growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the SixGe1-x-ySny composition.
%0 Journal Article
%1 Schwarz_2020
%A "Schwarz, Daniel"
%A "Funk, Hannes Simon"
%A Kateryna", "Guguieva
%A Michael", Öehme
%A Joerg", "Schulze
%D 2020
%J ECS Transactions
%K iht j.schulze.ihtsend:unibiblio journalsend:unibiblio
%N 5
%P 339-349
%R 10.1149/09805.0339ecst
%T Capacitance-Voltage Measurements on MBE-Grown Ge-SixGe1-x-ySny Heterojunction pn-Diodes for Material Characterisation
%U https://doi.org/10.1149%2F09805.0339ecst
%V 98
%X The ternary alloy semiconductor SixGe1-x-ySny presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. SixGe1-x-ySny offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- SixGe1-x-ySny hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the SixGe1-x-ySny growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the SixGe1-x-ySny composition.
@article{Schwarz_2020,
abstract = {The ternary alloy semiconductor SixGe1-x-ySny presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. SixGe1-x-ySny offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- SixGe1-x-ySny hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the SixGe1-x-ySny growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the SixGe1-x-ySny composition.
},
added-at = {2020-12-11T10:57:00.000+0100},
author = {"Schwarz, Daniel" and "Funk, Hannes Simon" and Kateryna", "Guguieva and Michael", "Oehme and Joerg", "Schulze},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/26c86a2d63ae898d2ed5e3dadf3404929/ihtpublikation},
doi = {10.1149/09805.0339ecst},
interhash = {305b2cd3f9dc21a2c5fc7510c3b18fdd},
intrahash = {6c86a2d63ae898d2ed5e3dadf3404929},
journal = {{ECS} Transactions},
keywords = {iht j.schulze.ihtsend:unibiblio journalsend:unibiblio},
month = {9},
number = 5,
pages = {339-349},
timestamp = {2020-12-11T10:12:57.000+0100},
title = {Capacitance-Voltage Measurements on {MBE}-Grown Ge-{SixGe}1-x-{ySny} Heterojunction pn-Diodes for Material Characterisation},
url = {https://doi.org/10.1149%2F09805.0339ecst},
volume = 98,
year = 2020
}
