A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one-hour annealing treatment at 980 °C. Due to the heat treatment, the formation of In-rich clusters with extensions between 10 nm and 100 nm and In-concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL-peak energy of about 90 meV compared to the as-grown sample and do not show a significant influence of the In-rich clusters on the emission wavelength.
Description
In-Redistribution in a GaInN Quantum Well upon Thermal Annealing | Request PDF
%0 Journal Article
%1 display:block).nova-c-button--color-blue.nova-c-button--theme-solid:focus-visible-webkit-box-shadow:0
%A Hahn, E.
%A Rosenauer, A.
%A Gerthsen, D.
%A Off, J.
%A Perez-Solorzano, V.
%A Jetter, M.
%A Scholz, F.
%D 2002
%K ihfg
%T In-Redistribution in a GaInN Quantum Well upon Thermal Annealing
%X A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one-hour annealing treatment at 980 °C. Due to the heat treatment, the formation of In-rich clusters with extensions between 10 nm and 100 nm and In-concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL-peak energy of about 90 meV compared to the as-grown sample and do not show a significant influence of the In-rich clusters on the emission wavelength.
@article{display:block){.nova-c-button--color-blue.nova-c-button--theme-solid:focus-visible{-webkit-box-shadow:0,
abstract = {A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after an one-hour annealing treatment at 980 °C. Due to the heat treatment, the formation of In-rich clusters with extensions between 10 nm and 100 nm and In-concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL-peak energy of about 90 meV compared to the as-grown sample and do not show a significant influence of the In-rich clusters on the emission wavelength.},
added-at = {2019-08-23T10:33:13.000+0200},
author = {Hahn, E. and Rosenauer, A. and Gerthsen, D. and Off, J. and Perez-Solorzano, V. and Jetter, M. and Scholz, F.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/25fe8c9a59cf0b15665d3d486a31ac8c7/renerehwagen},
description = {In-Redistribution in a GaInN Quantum Well upon Thermal Annealing | Request PDF},
interhash = {2e99577d08538794e720f064e3940245},
intrahash = {5fe8c9a59cf0b15665d3d486a31ac8c7},
keywords = {ihfg},
timestamp = {2019-08-23T08:33:13.000+0200},
title = {In-Redistribution in a GaInN Quantum Well upon Thermal Annealing},
year = 2002
}
