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Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well

, , , , , , , und . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Seite 1-6. (Mai 2019)

Zusammenfassung

The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform. The ternary alloy Silicon-Germanium-Tin enables achieving a direct bandgap material made from the indirect semiconductors Silicon, Germanium and Tin. By using a virtual Germanium substrate technology these semiconductors can be integrated on a Silicon wafer. In this paper, we discuss the characterization of grown and fabricated pin-diodes made from the ternary alloy Silicon-Germanium-Tin by using Molecular Beam Epitaxy technology on a virtual Germanium substrate formed on Silicon(001) wafers. To achieve higher Tin concentrations to enable direct band transitions, a thin Germanium-Tin layer is inserted into the intrinsic region of the pin-diodes resulting in a quantum well. It is shown that these pin-diodes have electrically good characteristics and in particular a low dark current density, which suggest a high crystal-quality.

Links und Ressourcen

DOI:
10.23919/MIPRO.2019.8757211
URL:
BibTeX-Schlüssel:
8757211
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