A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
%0 Conference Paper
%1 sharma2020robust
%A Sharma, Kanuj
%A Dayanand, Deepak
%A Muñoz Barón, Kevin
%A Ruthardt, Johannes
%A Münzenmayer, Florian
%A Hückelheim, Jan
%A Kallfass, Ingmar
%B 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
%D 2020
%I IEEE
%K mult ubs_10005 ubs_20007 ubs_30072 ubs_30076 ubs_40346 unibibliografie wos
%P 1532-1536
%R 10.1109/APEC39645.2020.9124609
%T A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
%@ 978-1-7281-4829-8 and 978-1-7281-4828-1 and 978-1-7281-4830-4
@inproceedings{sharma2020robust,
added-at = {2022-03-17T12:58:47.000+0100},
author = {Sharma, Kanuj and Dayanand, Deepak and Muñoz Barón, Kevin and Ruthardt, Johannes and Münzenmayer, Florian and Hückelheim, Jan and Kallfass, Ingmar},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2368b879ef2f1d559ba30c51735c7f2c2/unibiblio},
booktitle = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC)},
doi = {10.1109/APEC39645.2020.9124609},
eventdate = {2020-03-15/2020-03-19},
eventtitle = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC)},
interhash = {6570b861a69717f5916ef53b0c638b5c},
intrahash = {368b879ef2f1d559ba30c51735c7f2c2},
isbn = {{978-1-7281-4829-8} and {978-1-7281-4828-1} and {978-1-7281-4830-4}},
keywords = {mult ubs_10005 ubs_20007 ubs_30072 ubs_30076 ubs_40346 unibibliografie wos},
language = {eng},
pages = {1532-1536},
publisher = {IEEE},
timestamp = {2022-03-17T11:58:47.000+0100},
title = {A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter},
venue = {New Orleans, LA, USA},
year = 2020
}