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A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

, , , , , , and . 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), page 1532-1536. IEEE, (2020)
DOI: 10.1109/APEC39645.2020.9124609

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