Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ωcm2.
:C$\backslash$:/Users/iismike/AppData/Local/Mendeley Ltd./Mendeley Desktop/Downloaded/Bechler et al. - 2018 - Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111).pdf:pdf
%0 Journal Article
%1 Bechler2018
%A Bechler, Stefan
%A Kern, Michal
%A Funk, Hannes Simon
%A Colston, Gerard
%A Fischer, Inga Anita
%A Weißhaupt, David
%A Myronov, Maksym
%A Van Slageren, Joris
%A Schulze, Jörg
%D 2018
%J Semiconductor Science and Technology
%K myown
%N 9
%P 95008
%R 10.1088/1361-6641/aad4cf
%T Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
%V 33
%X Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ωcm2.
@article{Bechler2018,
abstract = {Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ωcm2.},
added-at = {2020-10-12T12:49:41.000+0200},
author = {Bechler, Stefan and Kern, Michal and Funk, Hannes Simon and Colston, Gerard and Fischer, Inga Anita and Wei{\ss}haupt, David and Myronov, Maksym and {Van Slageren}, Joris and Schulze, J{\"{o}}rg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/232fff156070f2fada5ed9595aadcbea8/michalkern},
doi = {10.1088/1361-6641/aad4cf},
file = {:C$\backslash$:/Users/iismike/AppData/Local/Mendeley Ltd./Mendeley Desktop/Downloaded/Bechler et al. - 2018 - Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111).pdf:pdf},
interhash = {128b7f645b2c9f7345607e59d0f8c579},
intrahash = {32fff156070f2fada5ed9595aadcbea8},
issn = {13616641},
journal = {Semiconductor Science and Technology},
keywords = {myown},
number = 9,
pages = 95008,
timestamp = {2020-10-12T10:49:41.000+0200},
title = {Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)},
volume = 33,
year = 2018
}
