Zusammenfassung

We report room temperature current voltage characteristics of Si p+-i-n+ Esaki diodes integrated on silicon substrates. The diodes were fabricated by low-temperature molecular beam epitaxy. Very high and abrupt p- and n-type dopant transitions into the 1020 cm−3 ranges are achieved by boron and antimony, respectively. The integrated devices are realized without a postgrowth annealing step. The silicon Esaki diodes show negative differential resistance at room temperature with excellent peak to valley current ratios up to 3.94. A variation in the thickness of the silicon tunneling barrier changes the peak current density over three orders of magnitude.

Links und Ressourcen

DOI:
10.1063/1.3274136
URL:
BibTeX-Schlüssel:
oehme2009esaki
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