Towards electrical detection of plasmons in all-silicon pin-diodes

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physica status solidi (b) 249 (4): 773-777 (2012)
DOI: 10.1002/pssb.201100774


Abstract We investigate the possibility for optically exciting and electrically detecting surface plasmon polaritons (SPPs) in a set-up fully compatible with complementary-metal-oxide-semiconductor that consists of a silicon pin-diode. A grating in the aluminum electrode of the pin-diode is intended to enable the optical excitation of SPPs at the interface between the aluminum metallization and the SiO2-passivation of the diode. When the SPP propagates towards the pin-diode and excites electron–hole pairs, it can be detected on the basis of the resulting photocurrent. We report on preliminary results obtained with scanning photocurrent microscopy with three different laser wavelengths (458, 512, and 633 nm).



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