The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si
We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) - the Ge Zener-Emitter (ZE). The ZE is a device featuring light amplification up to 4.7 dB (92 mA) at center wavelength of 1700 nm and gain-bandwidth of 98 nm on Si (100). Our novel direct Zener band-to-band tunneling (BTBT) injection method enables low-voltage electron emission beyond the Boltzmann-limit (38 mV/dec at 1.55 K, 88 mV/dec at 300 K), achieving population-inversion at 0.45 V (41 mA). The ZE possesses a Si-Ge-Si hetero-structure with excellent CMOS integration compatibility by planar device design (550 nm) and an ultra-thin (100 nm) Ge virtual substrate (VS) on Si (100). Moreover, the ZE shows superior light emission properties with pulsed lasing at 1667 nm and superluminescent LED characteristic (150 cm-1 max. gain at 270 K, 100 cm-1 max. gain at 300 k). The developed ZE device presents a promising feature to monolithic Si-photonics filling the gap for energy-efficient light emission and amplification in a small footprint (1 mm) integrated waveguide-amplifier.
%0 Conference Paper
%1 7838474
%A Koerner, R.
%A Schwaiz, D.
%A Fischer, I. A.
%A Augel, L.
%A Bechler, S.
%A Haenel, L.
%A Kern, M.
%A Oehme, M.
%A Rolseth, E.
%A Schwartz, B.
%A Weisshaupt, D.
%A Zhang, W.
%A Schulze, J.
%B 2016 IEEE International Electron Devices Meeting (IEDM)
%D 2016
%K myown
%P 22.5.1-22.5.4
%R 10.1109/IEDM.2016.7838474
%T The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si
%U https://ieeexplore.ieee.org/document/7838474/
%X We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) - the Ge Zener-Emitter (ZE). The ZE is a device featuring light amplification up to 4.7 dB (92 mA) at center wavelength of 1700 nm and gain-bandwidth of 98 nm on Si (100). Our novel direct Zener band-to-band tunneling (BTBT) injection method enables low-voltage electron emission beyond the Boltzmann-limit (38 mV/dec at 1.55 K, 88 mV/dec at 300 K), achieving population-inversion at 0.45 V (41 mA). The ZE possesses a Si-Ge-Si hetero-structure with excellent CMOS integration compatibility by planar device design (550 nm) and an ultra-thin (100 nm) Ge virtual substrate (VS) on Si (100). Moreover, the ZE shows superior light emission properties with pulsed lasing at 1667 nm and superluminescent LED characteristic (150 cm-1 max. gain at 270 K, 100 cm-1 max. gain at 300 k). The developed ZE device presents a promising feature to monolithic Si-photonics filling the gap for energy-efficient light emission and amplification in a small footprint (1 mm) integrated waveguide-amplifier.
@inproceedings{7838474,
abstract = {We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) - the Ge Zener-Emitter (ZE). The ZE is a device featuring light amplification up to 4.7 dB (92 mA) at center wavelength of 1700 nm and gain-bandwidth of 98 nm on Si (100). Our novel direct Zener band-to-band tunneling (BTBT) injection method enables low-voltage electron emission beyond the Boltzmann-limit (38 mV/dec at 1.55 K, 88 mV/dec at 300 K), achieving population-inversion at 0.45 V (41 mA). The ZE possesses a Si-Ge-Si hetero-structure with excellent CMOS integration compatibility by planar device design (550 nm) and an ultra-thin (100 nm) Ge virtual substrate (VS) on Si (100). Moreover, the ZE shows superior light emission properties with pulsed lasing at 1667 nm and superluminescent LED characteristic (150 cm-1 max. gain at 270 K, 100 cm-1 max. gain at 300 k). The developed ZE device presents a promising feature to monolithic Si-photonics filling the gap for energy-efficient light emission and amplification in a small footprint (1 mm) integrated waveguide-amplifier.},
added-at = {2020-10-12T12:58:54.000+0200},
author = {{Koerner}, R. and {Schwaiz}, D. and {Fischer}, I. A. and {Augel}, L. and {Bechler}, S. and {Haenel}, L. and {Kern}, M. and {Oehme}, M. and {Rolseth}, E. and {Schwartz}, B. and {Weisshaupt}, D. and {Zhang}, W. and {Schulze}, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2130f581b08f9afefac19f2c788750d43/michalkern},
booktitle = {2016 IEEE International Electron Devices Meeting (IEDM)},
doi = {10.1109/IEDM.2016.7838474},
interhash = {7f04cda5265b30b8163bb16b8b2687a7},
intrahash = {130f581b08f9afefac19f2c788750d43},
issn = {2156-017X},
keywords = {myown},
month = dec,
pages = {22.5.1-22.5.4},
timestamp = {2020-10-12T10:58:54.000+0200},
title = {The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si},
url = {https://ieeexplore.ieee.org/document/7838474/},
year = 2016
}